Torsion spring for electro-mechanical switches and a cantilever-type RF micro-electromechanical switch incorporating the torsion spring

ABSTRACT

A torsion spring for an electromechanical switch is presented. The torsion spring comprises a set of tines including at least one tine extending from the free end of the armature of a switch. A terminus portion is rotatably suspended between the tines, and includes a conducting transmission line, at least a portion of which is exposed for electrical contact. The conducting transmission line has a length selected such that the exposed portion of the transmission line forms a circuit between the input and output of the micro-electro-mechanical switch when the micro-electro-mechanical switch is urged into a closed position, with the terminus portion rotating via the tines to form a conformal connection between the exposed portion of the conducting transmission line and the input and output of the switch, thus optimizing the electrical flow therebetween. The switch is also applied to MEMS devices.

PRIORITY CLAIM

[0001] This application claims the benefit of priority to theprovisional Application Ser. No. 60/275,171, titled “Priority-BasedDynamic Slot Reservation for Airborne Supported Wireless Ad-hocNetworks” filed with the United States Patent and Trademark Office onMar. 12, 2001 and the utility application Ser. No. 10/097,632, titled“Torsion Spring For Electro-Mechanical Switches And A Cantilever-Type RFMicro-Electromechanical Switch Incorporating The Torsion Spring” filedwith the United States Patent and Trademark Office on Mar. 12, 2002.

BACKGROUND OF THE INVENTION

[0002] (a) Technical Field of the Invention

[0003] The present invention generally relates to electromechanicalswitches, more particularly to micro-electromechanical switches (MEMS),and most particularly to high power RF MEMS.

[0004] (b) Description of Related Art

[0005] In communications applications, switches are often designed withsemiconductor elements such as transistors or pin diodes. At microwavefrequencies, however, these devices suffer from several shortcomings.Pin diodes and transistors typically have an insertion loss greater than1 dB, which is the loss across the switch when the switch is closed.Transistors operating at microwave frequencies tend to have an isolationvalue less than 20 dB. This allows a signal to ‘bleed’ across the switcheven when the switch is open. Pin diodes and transistors have a limitedfrequency response and typically only respond to frequencies below 20GHz. In addition, the insertion losses and high isolation value forthese switches vary depending on the frequency of the signal passingthrough the switches. These characteristics make semiconductortransistors and pin diodes a poor choice for switches in microwaveapplications.

[0006] U.S. Pat. No. 5,121,089, to Larson, disclosed a new class ofmicrowave switch—the micro-electro-mechanical (MEM) switch. The MEMswitch has a very low insertion loss (less than 0.2 dB at 45 GHz) and ahigh isolation when open (greater than 30 dB). In addition, the switchhas a large frequency response and a large bandwidth compared tosemiconductor transistors and pin diodes. These characteristics give theMEM switch the potential to replace traditional narrow-bandwidth PINdiodes and transistor switches in microwave circuits.

[0007] The Larson MEM switch utilizes an armature design. One end of ametal armature is affixed to an output line, and the other end of thearmature rests above an input line. The armature is electricallyisolated from the input line when the switch is in an open position.When a voltage is applied to an electrode below the armature, thearmature is pulled downward and contacts the input line. This creates aconducting path between the input line and the output line through themetal armature.

[0008] Micro-electromechanical switches of the general type describedabove are, however, prone to premature failure. The cause of thepremature failure is linked to the damage resulting from the impact ofthe armature contact with the substrate contact. This damage isexacerbated by the fact that conventional MEM switches have armaturecontacts that impinge on the substrate contact surface at an angle. Theangled impact results in all the impact energy being transferred to arelatively small area, thereby ultimately causing premature failure dueto both increased impact per unit area and heat caused by resistiveheating due to increased current density through the small area ofactual contact.

SUMMARY OF THE INVENTION

[0009] The present invention solves this and other problems by providinga torsion spring which is configured to result in a substantiallyconformal contact between the contact plates. The resultant MEMS hasincreased durability, and because the substantially conformal contactresults in a better electrical contact, there is less heating and theMEM switch can handle more power. Thus, a more durable and versatile MEMswitch results.

[0010] One embodiment of the present invention provides an armaturemounted torsion spring, wherein the torsion spring is configured toprovide sufficient flexibility such that when an armature electrode iselectromechanically brought into contact with a substrate electrode theelectrodes provide substantial conformity with one another and thusmaximize contact area, reduce wear and reduce Ohmic resistance.

[0011] This invention provides a new RF MEM switch in which the RF lineis loaded with a torsion spring to achieve a conformal metal to metalcontact. A conformal metal to metal contact assures a maximum contactarea and lowest contact resistance, and, therefore, provides forcritical long term reliability and good heat dissipation thus allowingfor improved high-power handling.

[0012] In another embodiment, the present invention provides a torsionspring for an electromechanical switch. The torsion spring comprises aset of tines with the set of tines having at least one tine. The set oftines extends from a free end of the armature of the switch, andincludes a terminus portion rotatably suspended between the tines. Theterminus portion includes a conducting transmission line, at least aportion of which is exposed for electrical contact. The conductingtransmission line have a length selected such that the exposed portionof the transmission line forms a circuit between the input and output ofthe micro-electro-mechanical switch when the micro-electro-mechanicalswitch is urged into a closed position. When the switch closes, theterminus portion rotates via the tines to form a conformal connectionbetween the exposed portion of the conducting transmission line and theinput and output of the switch, thus optimizing the electrical flowtherebetween.

[0013] In another embodiment of the torsion spring, the portion of theconducting transmission line exposed for electrical contact is in theform of a plurality of dimples. Each dimple corresponds to the contactto be made with the input and the output, respectively. The dimplescombined with the rotatable nature of the terminus provide a conformalcontact between the conducting transmission line and the input and theoutput to form a circuit therebetween.

[0014] The torsion spring is preferably constructed of a materialselected from a group consisting of silicon nitride, Type III-Vsemiconductor materials, and silicon dioxide. The conductingtransmission line is preferably formed from a titanium adhesive layerand a gold conductor layer.

[0015] The set of tines of the torsion spring preferably includes aplurality of tines, and more preferably includes two tines.

[0016] In another embodiment, the present invention provides amicro-electro-mechanical switch comprising a substrate with an inputline, an output line, and a substrate electrode formed on the top of thesubstrate, all separated from each other. The switch further includes anarmature having a first beam structural layer with a first endmechanically connected with the substrate and a second end including aset of tines with at least one tine. A terminus portion is suspendedbetween the tines, and includes a conducting transmission linepositioned over the input and output lines. At least a portion of theconducting transmission line is exposed for conformal contact with theinput and output lines. The armature further includes an armatureelectrode positioned directly above the substrate electrode andsuspended on the armature. An insulating layer is positioned between thearmature electrode and the substrate electrode to preventshort-circuiting therebetween. Thus, when the switch is actuated into a“closed” position, the terminus is free to rotate to ensure a conformalcontact between the exposed portion of the conducting transmission lineand the input and output lines in order to form a circuit therebetweento permit the flow of electricity.

[0017] The armature of the switch is preferably modified with the sameenhancements discussed relative to the torsion spring embodiment above.

[0018] In another embodiment of the micro-electro-mechanical switch, theinsulating layer is formed as a second beam structural layer under thearmature electrode. The first and the second beam structural layers areformed of materials selected such that their mechanical and thermalproperties provide a desired amount of bowing when the switch isactivated.

[0019] Another embodiment of the present invention provides an armaturefor a micro-electro-mechanical switch having a torsion spring. Thearmature comprises a first beam structural layer having a first end formechanically connecting with a substrate of a micro-electro-mechanicalswitch and a second end including a set of tines including at least onetine. A terminus portion is suspended between the tines, and includes aconducting transmission line configured to be positioned over the inputand output lines of a micro-electro-mechanical switch. At least aportion of the conducting transmission line is exposed for conformalcontact with the input and output lines. An armature electrode isdirectly above a substrate electrode of the micro-electro-mechanicalswitch and suspended on the armature, and an insulating layer ispositioned between the armature electrode and the substrate electrode toprevent short-circuiting therebetween when the armature is assembled ina micro-electro-mechanical switch and actuated into a closed position.When the armature is assembled in a micro-electro-mechanical switch andis actuated into a “closed” position, the terminus is free to rotate toensure a conformal contact between the exposed portion of the conductingtransmission line and the input and output lines in order to form acircuit therebetween to permit the flow of electricity.

[0020] The armature is preferably modified with the same enhancementsdiscussed relative to the torsion spring embodiment above.

[0021] In another embodiment of the armature, the insulating layer isformed as a second beam structural layer under the armature electrode,with the first and the second beam structural layers formed of materialsselected such that their mechanical and thermal properties provide adesired amount of bowing when the switch is activated.

BRIEF DESCRIPTION OF THE DRAWINGS

[0022] The advantages set forth in the SUMMARY above, and other featuresand advantages will become more apparent from a detailed considerationof the invention when taken in conjunction with the drawings in which:

[0023]FIG. 1 is a top overview of an alternative embodiment of a MEMswitch embodying the present invention, wherein the conductingtransmission line is positioned over both the input line and the outputline;

[0024]FIG. 2A shows a side elevation view of the MEM switch depicted inFIG. 1;

[0025]FIG. 2B is the MEMS switch of FIG. 2A in a closed position;

[0026]FIGS. 3A and 3B are side elevation views of an alternativeembodiment of the MEM switch depicted in FIG. 1 wherein the ordering ofthe layers comprising the armature is altered;

[0027]FIGS. 4A-4F are side elevation views of the MEM switch of FIG. 1during progressive steps of a fabrication process further embodying thepresent invention; and

[0028]FIG. 5 is a MEM switch embodying the present invention, whereinthe switch is configured with a shunt capacitance to match the MEMswitch to a 50 ohm feed line.

DESCRIPTION OF THE PREFERRED EMBODIMENT

[0029] The present invention generally relates to electro andmicro-electromechanical switches (MEMS), and more particularly to atorsion spring for providing improved input/output contact in high powerRF MEMS. The following description, taken in conjunction with thereferenced drawings, is presented to enable one of ordinary skill in theart to make and use the invention and to incorporate it in the contextof particular applications. Various modifications, as well as a varietyof uses in different applications, will be readily apparent to thoseskilled in the art, and the general principles defined herein, may beapplied to a wide range of embodiments. Thus, the present invention isnot intended to be limited to the embodiments presented, but is to beaccorded the widest scope consistent with the principles and novelfeatures disclosed herein. Furthermore it should be noted that unlessexplicitly stated otherwise, the figures included herein are illustrateddiagrammatically and without any specific scale, as they are provided asqualitative illustrations of the concept of the present invention.

[0030] This invention teaches a torsion spring to assure a conformalcontact between the armature contact and the electrodes inelectromechanical switches, and has particular use with MEMS. Theconforming nature of the contact provided by the present invention isintended to maximize the available contact area so that the contactresistance is minimized, and heat dissipation is improved. The existingsimple cantilever beam type of RF MEMS switch such as the RF switchdisclosed in U.S. Pat. No. 6,046,659 which is herein incorporated forall that it discloses, is an example of a switch having thedisadvantages of making edge contact as the switch is snapped down. Thecontact area in this older switch is usually around 10 microns² of thetotal dimple (contact plate) size of greater than 100 microns². Theimpact of the contact of the electrode with the edge of the dimple canresult in excessive wear and premature failure. This excessive wear isthe primary limiting factor to the number of cycles that the switch willaccommodate prior to failure. The present invention simultaneouslyincreases the switch cycle-lifespan and substantially increases theswitch's power handling capacity, as compared to conventional RFswitches.

[0031] The switch can be fabricated using existing fabrication processesincluding those disclosed in U.S. Pat. No. 6,046,659. Reliabilitystudies on existing RF MEM switches indicate that a dominant factorlimiting the switch cycling times is the nature of the edge contact ofdimples upon actuation. Edge contact allowed less than 10% of the dimplesurface to touch the electrode. This limitation on contact area resultsin a two-fold problem: First, a smaller contact area necessarily resultsin greater impact related damage on the switching system, resulting inpart from a concentrated point of impact, and second, the smallercontact area results in an inferior connection and an associatedincrease in Joule (resistive) heating, which can also contribute topremature failure and inferior performance. The larger contact areaprovided by the present invention results in superior contact, betterheat dissipation and power handling and simultaneously reduces theimpact related damage at the point of contact.

[0032] The improved reliability and power handling capability of thepresent design is achieved with the addition of a torsion spring,configured to provide the dimple contact with a freedom of rotation.Experimental results have shown that this structure reduces thelikelihood of premature impact-related failure and also assuresconformal dimple contact, thus minimizing contact resistance.Additionally, this type of switch has an improved power-handlingcapability, as heat dissipation is improved by the much larger contactarea.

[0033]FIG. 1 depicts a top view of an embodiment of amicro-electro-mechanical (MEM) switch 10 according to the presentinvention. In this embodiment, a conducting transmission line 28 isbetween first and second beam structural layers 26 and 27 and is notconnected directly to either the input line 20 or the output line 18. Anarmature bias electrode 30 covers a large portion of the underside ofthe armature 16 and the area between the beam structural layers 26 and27. One end of the armature 16 is affixed directly to the substrate 14.The free end of the armature 16, beyond the armature bias electrode 30,is bifurcated, forming a pair of tines 40, with a terminus portion 42rotatably supported on the tines 40 and resting across a gap between theinput line 18 and the output line 20. The conducting transmission line28 is positioned on the terminus portion 42 of the armature 16, so thatit can bridge the gap between the input line 20 and the output line 18when the switch 10 is closed. When a voltage is applied between thesubstrate bias electrode 22 and the armature bias electrode 30, thearmature 16 will bend towards the substrate 14. This forces theconducting transmission line 28 into electrical contact with both theinput line 18 and the output line 20, thereby closing the switch. Asignal can then pass from the input line 18 to the output line 20through the conducting transmission line 28.

[0034]FIGS. 2A and 2B are side-elevational views of the MEMS switch 10shown in FIG. 1. FIG. 2A depicts the MEMS switch in an “open” state andFIG. 2B depicts it in a “closed” state. The beam structural material 26is connected to the substrate 14 through the fixed anchor vias 32. Thesuspended armature bias electrode 30 is nested within the structuralmaterial between layers 26 and 27, and is electrically accessed viacontact between the bias line 38 and the armature bias pad 34. Theconducting transmission line 28 is at the free end of the beamstructural layers 26 and 27 and is electrically isolated from thesuspended armature bias electrode 30 by the (dielectric) beam structurallayers 26 and 27. The conducting transmission line 28 is provided with apair of dimples 24 so that when the switch 10 is closed, the combinationof the dimples 24 and the transmission line 28 form a conductive pathwaybetween the input line 18 and the output line 20, allowing electricityto flow therethrough. The gap between the dimples 24 and the substrate14 is less than the distance between the first structural layer 26 andthe substrate 14. The transmission line 28 and the dimples 24 arepreferably encased within the terminus portion 42 of the armature 16,which is suspended by the tines 40. The tines 40 provide a portion ofthe armature 16 that is sufficiently flexible to permit the terminusportion 42 to rotate in order to ensure a conforming contact between thedimples 24 and the input line 18 and the output line 20. Variations inthe thickness and shape of the tines 40 can be used to provide desirable“spring” properties. Additionally, the placement of the attachmentbetween the tines 40 and the terminus portion 42 can be varied in orderto accommodate a desired degree and direction of rotation to ensure aconformal contact between the dimples 24 and the input line 18 and theoutput line 20 in order to optimize the flow of electricity.Furthermore, depending on the particular embodiment and the degree ofrotational freedom desired, the number of tines used may vary from oneto as many as practical for a particular application. Note that thetines 40 must be sufficiently rigid to ensure that they resume theirformer shape after bending to provide the conforming contact. If theyare formed too rigidly, depending on the closure force exerted on theswitch 10, a brittle fracture may result. The suspended contact dimples24 extend through and below the first beam structural layer 26 anddefine the areas of metal contact for the input and output lines 18 and20, respectively. The substrate bias electrode 22 is below the suspendedarmature bias electrode 30 on the surface of the substrate 14, and isseparated therefrom by an air gap 44. When a voltage is applied betweenthe suspended armature bias electrode 30 and the substrate biaselectrode 22, an electrostatic attractive force pulls the suspendedarmature bias electrode 30, along with the attached armature 16, towardthe substrate bias electrode 22. In action, the dimple 24 first contactsthe input line 18, at which point the armature 16 bends to allow thesuspended armature bias electrode 30 to approach the substrate biaselectrode 22. As a result, the suspended contact dimples 24 touch theinput line 20 and the output line 18, so the conducting transmissionline 28 bridges the gap between the input line 18 and the output line 20thereby closing the MEM switch 10 to the position shown in FIG. 2B.Thus, the force of the metallic contact between the dimple 24 and theinput line 18 is primarily dependent on the flexibility of the tines 40and the geometry of the dimple 24, and not on the attractive forces ofthe armature electrode 30 to the substrate electrode 22.

[0035] It is worth noting that metallic switches that do not havecontact dimples have contacts that depend on armature flexibility andbias strength, factors which vary with the temperature, age, and theamount of use of the MEM switch. In addition to improving repeatability,the quality of the contact itself is improved by the addition of thedimple because the dimple has a controllable size and surface texture,characteristics that are dependent on the fabrication rather than on theenvironment. Thus, MEM switches without the dimple 24 are more likely tohave time-varying contact characteristics, a feature that may make themdifficult or impossible to use in some circuit implementations.

[0036]FIGS. 3A and 3B are side-elevational views of an alternativeembodiment of the MEMS 10 in FIG. 1, FIG. 2A, and FIG. 2B. In this case,the suspended armature bias electrode 30 is an exposed layer on thebottom of the armature 16. Because of the exposed nature of thesuspended armature bias electrode 30, an additional insulating layer 48is provided on top of the substrate bias electrode 22 to keep thearmature bias electrode 30 and the substrate bias electrode 22 frombecoming electrically shorted when the switch is in the closed position.

[0037]FIGS. 5A-5F illustrate a manufacturing process that may beemployed for fabricating the MEM switch 10 of FIGS. 1 and 2. The processbegins with a substrate 14. In a preferred embodiment, GaAs is used asthe substrate. Other materials may be used, however, such as InP,ceramics, quartz, or silicon. This allows the circuit elements as wellas the MEM switch 10 to be fabricated simultaneously on the samesubstrate using standard integrated circuit fabrication technology suchas metal sputtering and masking. The substrate is chosen primarily basedon the technology of the circuitry and the MEM switch is to be connectedwith so that the MEM switch and the circuit may be fabricatedsimultaneously. For example, InP can be used for low noise HEMT MMICS(high electron mobility transistor monolothic microwave integratedcircuits) and GaAs is typically used for PHEMT (pseudomorphic HEMT)power MMICS. The flexibility in the fabrication of the MEM switch 10allows it to be used in a variety of circuits. This reduces the cost andcomplexity of circuits designed using the present MEM switch.

[0038]FIG. 4A shows a profile of the MEM switch 10 after the first stepof depositing a metal layer onto the substrate 14 for the armature biaspad 34, the input and output lines 18 and 20, and the substrate biaselectrode 22 is complete. The metal layer may be depositedlithographically using standard integrated circuit fabricationtechnology, such as resist lift-off or resist definition and metal etch.In the preferred embodiment, gold (Au) is used as the primarycomposition of the metal layer. Au is preferred in RF applicationsbecause of its low resistivity. In order to ensure the adhesion of theAu to the substrate, a thin layer (250-500 angstroms) of titanium (Ti)is deposited, followed by an approximately 1000 angstrom layer ofplatinum (Pt), and finally the Au. The Pt acts as a diffusion barrier(an anti-diffusion layer) to keep the Au from intermixing with the Tiand causing the metal to lose adhesion strength to the substrate. Otheranti-diffusion layer materials may be used, depending on the needs of aparticular embodiment. In the case of a III-V semiconductor substrate, athin layer of gold germanium (AuGe) eutectic metal may be depositedfirst to ensure adhesion of the Au by alloying the AuGe into thesemiconductor similar to a standard ohmic metal process for any III-VMESFET or HEMT.

[0039] Next, as shown in FIG. 4B, a sacrificial layer 46 is placed ontop of the metal layer (preferably Au) and etched so that the armature16 may be produced above the sacrificial layer 46. The sacrificial layer46 is typically comprised of 2 microns of SiO₂ which may besputter-deposited or deposited using PECVD (plasma enhanced chemicalvapor deposition). A via hole 52 is etched in the sacrificial layer 46so that the metal armature bias pad 34 is exposed in order to beginforming the fixed anchor vias 42. The via hole 52 definition may beperformed using standard resist lithography and etching of thesacrificial layer 46. Other materials besides SiO₂ may be used as asacrificial layer 46. The important characteristics of the sacrificiallayer 46 are a high etch rate, good thickness uniformity, and conformalcoating by the oxide of the metal already on the substrate 14. Thethickness of the oxide partially determines the thickness of the switchopening (gap 44), which is critical in determining the voltage necessaryto close the switch 10 as well as the electrical isolation of the switch10 when it is open. The sacrificial layer 46 will be removed in thefinal step to release the armature 16, as shown in FIG. 5F.

[0040] Another advantage of using SiO₂ as the sacrificial layer 46 isthat SiO₂ can withstand high temperatures. Other types of sacrificiallayers, such as organic polyimides, harden considerably if exposed tohigh temperatures. This makes the polyimide sacrificial layer difficultto later remove. The sacrificial layer 46 is exposed to hightemperatures when the silicon nitride for the beam structural layer isdeposited, as a high temperature deposition is desired when depositingthe silicon nitride to give the silicon nitride a lower BOE etch rate. Alow BOE etch rate minimizes the amount of the first beam structurallayer 26 that is lost when the SiO₂ is etched away.

[0041]FIG. 4C shows the fabrication of the first beam structural layer26. The first and second beam structural layers 26 and 27 provide thesupporting mechanism of the armature 16 and are preferably made out ofsilicon nitride, although other materials besides silicon nitride may beused, examples of which include Type III-V semiconductor materials, andsilicon dioxide. Silicon nitride is preferred because it can bedeposited so that neutral stress exists in the beam structural layers 26and 27. Neutral stress fabrication reduces the bowing that may occurwhen the switch is actuated. The material used for the first beamstructural layer 26 must have a low etch rate compared to thesacrificial layer 46 so that the first beam structural layer 26 is notetched away when the sacrificial layer 46 is removed to release thearmature 16. The first beam structural layer 26 is patterned and etchedusing standard lithographic and etching processes.

[0042] As depicted by the embodiment of FIGS. 3A and 3B, a beamstructural layer 26 may be formed either below or above the armaturebias electrode 30. If a beam structural layer 26 is fabricated on onlyone side of the armature bias electrode 30, bowing will occur in thearmature 16 when the switch is actuated if the stress in the beamstructural layer 26 differs from the stress in the armature biaselectrode 30. The armature 16 will bow either upward or downward,depending upon which material has the higher stress. Bowing can changethe voltage required to activate the switch and, if the bowing is severeenough, can prevent the switch from either opening (bowed downward) orclosing (bowed upward) regardless of the actuating voltage. Therefore,it is preferable to match the stress levels of the layer of the armaturebias electrode 30 with beam structural layer 26 (and 27, if applicable).Note, however, that the torsion spring-quality of the present inventionprovided by the tines 40 and the terminus portion 42 can aid to somedegree in countering bowing when necessary.

[0043] The beam structural layer may also be formed both above and belowthe armature bias electrode 30, as previously discussed relative to FIG.2, as a first beam structural layer 26 and a second beam structurallayer 27 in order to minimize the bowing in the armature 16. Byfabricating the beam structural layers 26 and 27 on both sides of thearmature bias electrode 30, the effect of differing material stresses isminimized because the second beam structural layer 27 is above thearmature bias electrode 30, and will flex in the same manner as thefirst beam structural layer 26 (below the armature bias electrode 30).The armature bias electrode 30 is constrained by the first and secondbeam structural layers 26 and 27, and will therefore flex with thestructural layers 26 and 27 so that the bowing in the switch isminimized. When two beam structural layers are used, it is preferablethat they be constructed of the same material in order to provide adesired minimum level of bowing of the switch. However, it is alsofeasible that combinations of different materials may be used to providea customized level of bowing with the tines providing a degree ofcompensation for the bowing.

[0044] In FIG. 4D, a dimple receptacle 54 is etched into the first beamstructural layer 26 and the sacrificial layer 46. The dimple receptacle54 is an opening where the dimple 24 will later be deposited. The dimplereceptacle 54 is created using standard lithography and a dry etch ofthe first beam structural layer 26, followed by a partial etch of thesacrificial layer 46. The opening allows the dimple to protrude throughthe first beam structural layer 26.

[0045] Next, a second metal layer forming the suspended armature biaselectrode 30, the conducting line 28, and the dimples 24 is depositedonto the first beam structural layer 26. In the preferred embodiment,the metal layer is comprised of a sputter deposition of a thin film (200angstroms) of Ti followed by a 1000 angstrom deposition of Au. The metallayer must be conformal across the wafer and acts as a plating plane forthe Au. The plating is done by using metal lithography to open up theareas of the switch that are to be plated. The Au is electroplated byelectrically contacting the membrane metal on the edge of the wafer andplacing the metal patterned wafer in the plating solution. The platingoccurs only where the membrane metal is exposed to the plating solutionto complete the electrical circuit and not where the electricallyinsulating resist is left on the wafer. After 2 microns of Au is plated,the rest is stripped off of the wafer and the whole surface is ionmilled to remove the membrane metal. Some Au will also be removed fromthe top of the plated Au during the ion milling, but the loss is minimalbecause the membrane is only 1200 angstroms thick.

[0046] The result of this process is that the armature bias electrode30, the conducting transmission line 28, and the dimple 24 are createdin the second metal layer, primarily Au in the preferred embodiment. Inaddition, the Au fills the via hole 52 and connects the armature biaselectrode 30 to the armature bias pad 34. Au is a preferred choice forsecond metal layer because of its low resistivity. When choosing themetal for the second layer and the material for the beam structurallayers 26 and 28, it is important to select the materials such that thestress of the beam structural layers 26 and 28 match the stress of thearmature bias electrode 30 and the conducting transmission line 28 sothat the armature 16 will not bow upwards or downwards when actuating.This is done by carefully determining the deposition parameters for thestructural layer. Silicon nitride was chosen for this structural layernot only for its insulating characteristics but in large part because ofthe controllability of these deposition parameters and the resultantstress levels of the film. Also note that in order to electricallyisolate the armature bias electrode 30 from the conducting transmissionline 28, a portion of the second metal layer therebetween must beremoved. In cases where both a first beam structural layer 26 and asecond beam structural layer 27 are used, this process must be performedbefore depositing the second beam structural layer 27 on the armaturebias electrode 30.

[0047] After deposition of the second beam structural layer 27, it islithographically defined and etched to complete the switch fabrication.Finally, the sacrificial layer 46 is removed to release the armature 16.Furthermore, the portion of the beam structural layers 26 and 27 formingthe tines 40 and the terminus portion 42 is etched in order to provide adesired thickness.

[0048] If the sacrificial layer is comprised of SiO₂, then it willtypically be wet etched away in the final fabrication sequence by usinga hydrofluoric acid (HF) solution. It is noteworthy that smallfluid-flow holes may be formed through the layers, particularly wherethe armature bias electrode 30 portion of the armature 16 has a largearea and in the terminus portion 42 of the armature 16 in order topermit smooth and even flow of the removal liquids to the sacrificiallayer 46 to optimize the removal process. The etch and rinses areperformed with post-processing in a critical point dryer to ensure thatthe armature 16 does not come into contact with the substrate 14 whenthe sacrificial layer 46 is removed. If contact occurs during thisprocess, device sticking and switch failure are likely. Contact isprevented by transferring the switch from a liquid phase (e.g. HF)environment to a gaseous phase (e.g. air) environment not directly, butby introducing a supercritical phase in between the liquid and gaseousphases. The sample is etched in HF and rinsed with DI water by dilution,so that the switch is not removed from a liquid during the process. DIwater is similarly replaced with methanol. The sample is transferred tothe critical point dryer and the chamber is sealed. High pressure liquidCO₂ replaces the methanol in the chamber, so that there is only CO₂surrounding the sample. The chamber is heated so that the CO₂ changesinto the supercritical phase. Pressure is then released so that the CO₂changes into the gaseous phase. Once the sample is surrounded only bygas, it may be removed from the chamber into room air. A sideelevational view of the MEM switch after the sacrificial layer 46 hasbeen removed is shown in FIG. 4F.

[0049]FIG. 5 depicts a third MEM switch 10″ where the MEM switch 10″ isconfigured to be connected to a 50 ohm through line. The input line 18and the output line 20 are segments of the 50 ohm through line. Animpedance matching network, not needed when designed with short inputand output lines, may be used to operate the switch 10″ at frequenciesgreater than 5 GHz without generating reflections at the input line 20or the output line 18. By itself, the switch 10″ presents an inductivereactance when placed in series with the 50 ohm through line. In orderto match the impedance of the switch 10″ to the 50 ohm line, a shuntcapacitance is added to the device. The shunt capacitance, in oneembodiment of the design, can be realized by adding a microstrip radialstub 60 to both the input line 20 and the output line 18. The stubs 60are angled away from the MEM switch to avoid series capacitive couplingbetween the stubs 60. Such series coupling would degrade the isolationof the MEM switch 10″ in the open position. The resulting circuit actsas a lowpass filter for frequencies up to the low millimeter-wave range(approximately 40 GHZ). The capacitance values are chosen to maximizethe cutoff frequency while maintaining a specified passband ripple.

[0050] In summary, in traditional armature MEMs, when the armature 16flexes toward the input and output lines 18 and 20, drawn by a substratebias electrode 22, the dimples 24 are unable to conformably contact theinput and output lines 18 and 20 due to the angular deflection caused bybending of the armature 16. As a result, the dimples 24 have relativelypoor contact with the input and output lines 18 and 20, with only about10% of the surface area of the dimples 24 actually making contact. Thispoor contact results in mechanical wear as well as heading due to theflow of electricity through a small area. The present inventionovercomes this problem by providing an armature-mounted torsion springcomprising a plurality of tines 40, attached with a terminus portion 42.The tines 40 permit rotation of the terminus portion 42 in order tomaximize the conformal contact of dimples 24 on the terminus portion 42with the an input line 18 and an output line 20 when the device isactuated in order to allow electricity to pass therethrough.

[0051] As can be surmised by one skilled in the art, there are many moreconfigurations of the present invention that may be used beyond thosepresented herein. For example, other metals can be used to form theconducting transmission line layer, the bias electrodes and pads, andthe input and output lines. The beam structural layers 26 and 27 and thesacrificial layer 46 may be fabricated with materials other than siliconnitride and silicon dioxide as long as suitable counterpart materialsare selected. Other impedance-matching networks or circuitry can also besubstituted for the radial stub embodiment shown. It is thereforeintended that the foregoing detailed description be regarded asillustrative rather than limiting and that it be understood that it isthe following claims, including all equivalents, are intended to definethe scope of this invention.

1. A micro-electro-mechanical switch comprising: a substrate; an inputline on top of the substrate; an output line on top of the substrate andseparated from the input line; a substrate electrode on top of thesubstrate, located near but separated from the input line and the outputline; and an armature comprising: a first beam structural layer having afirst end mechanically connected with the substrate and a second endincluding a set of tines including at least one tine with a terminusportion rotatably suspended therefrom, with the terminus portionincluding a conducting transmission line positioned over the input andoutput lines, with the at least a portion of the conducting transmissionline exposed for conformal contact with the input and output lines; andan armature electrode positioned directly above the substrate electrodeand suspended on the armature; an insulating layer positioned betweenthe armature electrode and the substrate electrode to preventshort-circuiting therebetween; whereby when the switch is actuated intoa “closed” position, the terminus portion is free to rotate to ensure aconformal contact between the exposed portion of the conductingtransmission line and the input and output lines in order to form acircuit therebetween to permit the flow of electricity.
 2. Amicro-electro-mechanical switch as set forth in claim 1, wherein theportion of the conducting transmission line exposed for electricalcontact is in the form of a plurality of dimples, with a dimplecorresponding to the contact to be made between the input and theoutput, respectively; whereby the dimples combined with the rotatablenature of the terminus portion provide a conformal contact between theconducting transmission line and the input and the output to form acircuit therebetween.
 3. A micro-electro-mechanical switch as set forthin claim 2, wherein the tines are constructed of a material selectedfrom a group consisting of silicon nitride, Type III-V semiconductormaterials, and silicon dioxide.
 4. A micro-electro-mechanical switch asset forth in claim 3, wherein the conducting transmission line is formedfrom a titanium adhesive layer and a gold conductor layer and ananti-diffusion layer therebetween.
 5. A micro-electro-mechanical switchas set forth in claim 1, wherein the conducting transmission line isformed from a titanium adhesive layer and a gold conductor layer and ananti-diffusion layer therebetween.
 6. A micro-electro-mechanical switchas set forth in claim 5, wherein the portion of the conductingtransmission line exposed for electrical contact is in the form of aplurality of dimples, with a dimple corresponding to the contact to bemade between the input and the output, respectively; whereby the dimplescombined with the rotatable nature of the terminus portion provide aconformal contact between the conducting transmission line and the inputand the output to form a circuit therebetween.
 7. Amicro-electro-mechanical switch as set forth in claim 1, wherein thetines are constructed of a material selected from a group consisting ofsilicon nitride, Type III-V semiconductor materials, and silicondioxide.
 8. A micro-electro-mechanical switch as set forth in claim 7,wherein the conducting transmission line is formed from a titaniumadhesive layer and a gold conductor layer and an anti-diffusion layertherebetween.
 9. A micro-electro-mechanical switch as set forth in claim1, wherein the first beam structural layer is positioned above thearmature electrode.
 10. A micro-electro-mechanical switch as set forthin claim 9, wherein the insulating layer is formed as a second beamstructural layer under the armature electrode, with the first and thesecond beam structural layers formed of materials selected such thattheir mechanical and thermal properties provide a desired amount ofbowing when the switch is activated.
 11. A micro-electro-mechanicalswitch as set forth in claim 10, wherein the portion of the conductingtransmission line exposed for electrical contact is in the form of aplurality of dimples, with a dimple corresponding to the contact to bemade between the input and the output, respectively; whereby the dimplescombined with the rotatable nature of the terminus portion provide aconformal contact between the conducting transmission line and the inputand the output to form a circuit therebetween.
 12. Amicro-electro-mechanical switch as set forth in claim 11, wherein thetines are formed of the same material as either the first or the secondbeam structural layer and the beam structural layers are constructed ofa material selected from a group consisting of silicon nitride, TypeIII-V semiconductor materials, and silicon dioxide.
 13. Amicro-electro-mechanical switch as set forth in claim 12, wherein theconducting transmission line is formed from a titanium adhesive layerand a gold conductor layer and an anti-diffusion layer therebetween. 14.A micro-electro-mechanical switch as set forth in claim 13, wherein theconducting transmission line is formed from a titanium adhesive layerand a gold conductor layer and an anti-diffusion layer therebetween. 15.A micro-electro-mechanical switch as set forth in claim 14, wherein theportion of the conducting transmission line exposed for electricalcontact is in the form of a plurality of dimples, with a dimplecorresponding to the contact to be made between the input and theoutput, respectively; whereby the dimples combined with the rotatablenature of the terminus portion provide a conformal contact between theconducting transmission line and the input and the output to form acircuit therebetween.
 16. A micro-electro-mechanical switch as set forthin claim 15, wherein the tines are constructed of a material selectedfrom a group consisting of silicon nitride, Type III-V semiconductormaterials, and silicon dioxide.
 17. A micro-electro-mechanical switch asset forth in claim 16, wherein the conducting transmission line isformed from a titanium adhesive layer and a gold conductor layer and ananti-diffusion layer therebetween.
 18. A micro-electro-mechanical switchas set forth in claim 9, wherein the portion of the conductingtransmission line exposed for electrical contact is in the form of aplurality of dimples, with a dimple corresponding to the contact to bemade between the input and the output, respectively; whereby the dimplescombined with the rotatable nature of the terminus portion provide aconformal contact between the conducting transmission line and the inputand the output to form a circuit therebetween.
 19. Amicro-electro-mechanical switch as set forth in claim 18, wherein thetines are formed of the same material as the first beam structural layerand the beam structural layers are each constructed of a materialselected from a group consisting of silicon nitride, Type III-Vsemiconductor materials, and silicon dioxide.
 20. Amicro-electro-mechanical switch as set forth in claim 19, wherein theconducting transmission line is formed from a titanium adhesive layerand a gold conductor layer and an anti-diffusion layer therebetween. 21.A micro-electro-mechanical switch as set forth in claim 9, wherein theconducting transmission line is formed from a titanium adhesive layerand a gold conductor layer and an anti-diffusion layer therebetween. 22.A micro-electro-mechanical switch as set forth in claim 21, wherein theportion of the conducting transmission line exposed for electricalcontact is in the form of a plurality of dimples, with a dimplecorresponding to the contact to be made between the input and theoutput, respectively; whereby the dimples combined with the rotatablenature of the terminus portion provide a conformal contact between theconducting transmission line and the input and the output to form acircuit therebetween.
 23. A micro-electro-mechanical switch as set forthin claim 9, wherein the tines are constructed of a material selectedfrom a group consisting of silicon nitride, Type III-V semiconductormaterials, and silicon dioxide.
 24. A micro-electro-mechanical switch asset forth in claim 23, wherein the conducting transmission line isformed from a titanium adhesive layer and a gold conductor layer and ananti-diffusion layer therebetween.
 25. A micro-electro-mechanical switchas set forth in claim 9, wherein the insulating layer is formed as alayer on the substrate electrode.
 26. A micro-electro-mechanical switchas set forth in claim 25, wherein the portion of the conductingtransmission line exposed for electrical contact is in the form of aplurality of dimples, with a dimple corresponding to the contact to bemade between the input and the output, respectively; whereby the dimplescombined with the rotatable nature of the terminus portion provide aconformal contact between the conducting transmission line and the inputand the output to form a circuit therebetween.
 27. Amicro-electro-mechanical switch as set forth in claim 26, wherein thetines are formed of the same material as the first beam structural layerand the beam structural layers are each constructed of a materialselected from a group consisting of silicon nitride, Type III-Vsemiconductor materials, and silicon dioxide.
 28. Amicro-electro-mechanical switch as set forth in claim 27, wherein theconducting transmission line is formed from a titanium adhesive layerand a gold conductor layer and an anti-diffusion layer therebetween. 29.A micro-electro-mechanical switch as set forth in claim 25, wherein theconducting transmission line is formed from a titanium adhesive layerand a gold conductor layer and an anti-diffusion layer therebetween. 30.A micro-electro-mechanical switch as set forth in claim 29, wherein theportion of the conducting transmission line exposed for electricalcontact is in the form of a plurality of dimples, with a dimplecorresponding to the contact to be made between the input and theoutput, respectively; whereby the dimples combined with the rotatablenature of the terminus portion provide a conformal contact between theconducting transmission line and the input and the output to form acircuit therebetween.
 31. A micro-electro-mechanical switch as set forthin claim 25, wherein the tines are constructed of a material selectedfrom a group consisting of silicon nitride, Type III-V semiconductormaterials, and silicon dioxide.
 32. A micro-electro-mechanical switch asset forth in claim 31, wherein the conducting transmission line isformed from a titanium adhesive layer and a gold conductor layer and ananti-diffusion layer therebetween.
 33. A torsion spring for amicro-electro-mechanical switch as set forth in claim 1, wherein the setof tines includes a plurality of tines.
 34. A torsion spring for amicro-electro-mechanical switch as set forth in claim 1, wherein the setof tines includes two tines.